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SI2304DDS-T1-GE3

SI2304DDS-T1-GE3

Product Overview

Category

The SI2304DDS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used for switching and amplifying electronic signals in various applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate charge

Package

The SI2304DDS-T1-GE3 is typically available in a small outline package (SOT-23) or a larger outline package (SO-8).

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 4.3A
  • On-Resistance: 45mΩ
  • Power Dissipation: 1.25W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI2304DDS-T1-GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low power consumption
  • High efficiency
  • Reliable performance over a wide temperature range
  • Enhanced thermal management

Advantages and Disadvantages

Advantages

  • Small form factor
  • Low on-resistance
  • Suitable for low-voltage applications
  • Fast switching speed

Disadvantages

  • Limited maximum voltage rating
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The SI2304DDS-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI2304DDS-T1-GE3 is widely used in: - Battery management systems - DC-DC converters - Load switches - Motor control circuits - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the SI2304DDS-T1-GE3 include: - SI2304DS-T1-GE3 - SI2304DST1E3 - SI2304DST1GE3

In conclusion, the SI2304DDS-T1-GE3 is a versatile power MOSFET with excellent characteristics suitable for a wide range of electronic applications, making it an essential component in modern electronic designs.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI2304DDS-T1-GE3 en soluciones técnicas

  1. What is the maximum drain-source voltage of SI2304DDS-T1-GE3?

    • The maximum drain-source voltage of SI2304DDS-T1-GE3 is 20V.
  2. What is the continuous drain current of SI2304DDS-T1-GE3?

    • The continuous drain current of SI2304DDS-T1-GE3 is 3.7A.
  3. What is the on-resistance of SI2304DDS-T1-GE3?

    • The on-resistance of SI2304DDS-T1-GE3 is typically 50mΩ.
  4. What is the gate threshold voltage of SI2304DDS-T1-GE3?

    • The gate threshold voltage of SI2304DDS-T1-GE3 is typically 1.5V.
  5. What is the power dissipation of SI2304DDS-T1-GE3?

    • The power dissipation of SI2304DDS-T1-GE3 is 1.25W.
  6. What are the package dimensions of SI2304DDS-T1-GE3?

    • The package dimensions of SI2304DDS-T1-GE3 are 3mm x 3mm.
  7. What are the recommended operating temperature range for SI2304DDS-T1-GE3?

    • The recommended operating temperature range for SI2304DDS-T1-GE3 is -55°C to 150°C.
  8. What are the typical applications for SI2304DDS-T1-GE3?

    • SI2304DDS-T1-GE3 is commonly used in load switching, power management, and battery protection applications.
  9. Does SI2304DDS-T1-GE3 have built-in ESD protection?

    • Yes, SI2304DDS-T1-GE3 has built-in ESD protection.
  10. Is SI2304DDS-T1-GE3 RoHS compliant?

    • Yes, SI2304DDS-T1-GE3 is RoHS compliant.