SI2314EDS-T1-E3

Product Category:
The SI2314EDS-T1-E3 belongs to the category of power MOSFETs, which are electronic devices used for switching and amplifying signals in various applications.

Basic Information Overview: - Category: Power MOSFET - Use: Switching and amplifying signals in electronic circuits - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: SOT-23 - Essence: Efficient power management - Packaging/Quantity: Available in tape and reel packaging with a quantity of 3000 units per reel

Specifications: - Voltage Rating: 20V - Current Rating: 3.7A - On-Resistance: 60mΩ - Package Type: SOT-23

Detailed Pin Configuration: The SI2314EDS-T1-E3 features a standard SOT-23 package with three pins arranged as follows: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features: - Low on-resistance for efficient power management - Fast switching speed for improved performance - Enhanced thermal characteristics for reliability

Advantages and Disadvantages: - Advantages: - High efficiency - Compact SOT-23 package - Fast switching speed - Disadvantages: - Limited voltage and current ratings compared to higher-power MOSFETs - Sensitive to electrostatic discharge (ESD)

Working Principles: The SI2314EDS-T1-E3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate voltage, the MOSFET can efficiently switch and amplify signals in electronic circuits.

Detailed Application Field Plans: The SI2314EDS-T1-E3 is ideally suited for use in various applications, including: - DC-DC converters - Power management in portable electronics - Motor control circuits - LED lighting systems

Detailed and Complete Alternative Models: - SI2301DS-T1-GE3 - SI2335DDS-T1-GE3 - SI2365EDS-T1-GE3

This comprehensive range of alternative models provides flexibility in selecting the most suitable power MOSFET for specific design requirements.

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