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SI3493BDV-T1-GE3

SI3493BDV-T1-GE3

Product Overview

Category

The SI3493BDV-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI3493BDV-T1-GE3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.

Essence

The essence of this product lies in its ability to efficiently control and manage power flow in electronic circuits.

Packaging/Quantity

It is usually packaged in reels containing a specific quantity, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 6.5A
  • On-Resistance: 20mΩ
  • Power Dissipation: 2.5W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI3493BDV-T1-GE3 has a standard pin configuration with three pins: Gate, Drain, and Source.

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient power management
  • High current handling capability for robust performance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Robust performance in high-current applications
  • Fast switching speed

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI3493BDV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to regulate the flow of power through the device.

Detailed Application Field Plans

This power MOSFET is widely used in various applications including: - Switching power supplies - Battery management systems - Motor control circuits - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the SI3493BDV-T1-GE3 include: - SI2302DS-T1-GE3 - SI2337DS-T1-GE3 - SI3443DV-T1-GE3

In conclusion, the SI3493BDV-T1-GE3 power MOSFET offers efficient power management and robust performance, making it suitable for a wide range of power management applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI3493BDV-T1-GE3 en soluciones técnicas

  1. What is the maximum voltage rating of SI3493BDV-T1-GE3?

    • The maximum voltage rating of SI3493BDV-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI3493BDV-T1-GE3?

    • The typical on-resistance of SI3493BDV-T1-GE3 is 20mΩ.
  3. What is the maximum continuous drain current of SI3493BDV-T1-GE3?

    • The maximum continuous drain current of SI3493BDV-T1-GE3 is 6.5A.
  4. What is the package type of SI3493BDV-T1-GE3?

    • SI3493BDV-T1-GE3 comes in a PowerPAK® 1212-8S package.
  5. Is SI3493BDV-T1-GE3 suitable for automotive applications?

    • Yes, SI3493BDV-T1-GE3 is designed for automotive applications.
  6. What is the operating temperature range of SI3493BDV-T1-GE3?

    • The operating temperature range of SI3493BDV-T1-GE3 is -55°C to 150°C.
  7. Does SI3493BDV-T1-GE3 have built-in ESD protection?

    • Yes, SI3493BDV-T1-GE3 features built-in ESD protection.
  8. Can SI3493BDV-T1-GE3 be used in power management applications?

    • Yes, SI3493BDV-T1-GE3 is suitable for power management applications.
  9. What is the gate threshold voltage of SI3493BDV-T1-GE3?

    • The gate threshold voltage of SI3493BDV-T1-GE3 is typically 1.5V.
  10. Is SI3493BDV-T1-GE3 RoHS compliant?

    • Yes, SI3493BDV-T1-GE3 is RoHS compliant.