SI4420BDY-T1-E3

Product Overview

Category

The SI4420BDY-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic circuits and power management applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed

Package

The SI4420BDY-T1-E3 is typically available in a D-PAK package.

Essence

This MOSFET is essential for efficient power control and management in electronic devices.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

• Drain-Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 18A
• RDS(ON) (Max) @ VGS = 10V: 9.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The SI4420BDY-T1-E3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• Low on-resistance for minimal power loss
• High voltage capability for versatile applications
• Fast switching speed for efficient power management

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-resistance
• Fast switching speed

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The SI4420BDY-T1-E3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI4420BDY-T1-E3 is widely used in: - Switching power supplies - Motor control circuits - LED lighting applications - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI4420BDY-T1-E3 include: - SI4410DY-T1-GE3 - SI4435DDY-T1-GE3 - SI4456DY-T1-GE3

In conclusion, the SI4420BDY-T1-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.

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