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SI4963BDY-T1-E3
Product Overview
Category
The SI4963BDY-T1-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- Low on-resistance
- High current handling capability
- Fast switching speed
- Low gate drive requirements
Package
The SI4963BDY-T1-E3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.
Essence
This MOSFET is essential for efficient power control and management in various electronic circuits.
Packaging/Quantity
It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.
Specifications
- Drain-Source Voltage: 30V
- Continuous Drain Current: 8.7A
- On-Resistance: 0.022 ohms
- Power Dissipation: 2.5W
- Gate-Source Voltage (Max): ±20V
Detailed Pin Configuration
The SI4963BDY-T1-E3 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low on-resistance minimizes power loss
- High current handling capability allows for efficient power delivery
- Fast switching speed enables rapid response in power management applications
- Low gate drive requirements reduce the need for complex driver circuits
Advantages
- Efficient power management due to low on-resistance
- Suitable for high-current applications
- Fast switching speed enhances system responsiveness
- Simplified circuit design with low gate drive requirements
Disadvantages
- May require careful consideration of heat dissipation in high-power applications
- Sensitivity to static discharge requires proper handling during assembly
Working Principles
The SI4963BDY-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in electronic circuits.
Detailed Application Field Plans
The SI4963BDY-T1-E3 is widely used in: - Switching power supplies - DC-DC converters - Motor control circuits - Battery management systems - LED lighting applications
Detailed and Complete Alternative Models
- SI2301DS-T1-GE3
- SI2333DDS-T1-GE3
- SI2312CDS-T1-GE3
- SI2304DS-T1-GE3
In conclusion, the SI4963BDY-T1-E3 power MOSFET offers efficient power management capabilities, making it suitable for a wide range of applications in electronics. Its low on-resistance, high current handling, and fast switching speed make it an essential component in modern power control circuits.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI4963BDY-T1-E3 en soluciones técnicas
What is the maximum voltage rating for SI4963BDY-T1-E3?
- The maximum voltage rating for SI4963BDY-T1-E3 is typically 30V.
What is the typical on-resistance of SI4963BDY-T1-E3?
- The typical on-resistance of SI4963BDY-T1-E3 is around 20mΩ.
What is the maximum continuous drain current for SI4963BDY-T1-E3?
- The maximum continuous drain current for SI4963BDY-T1-E3 is usually around 50A.
What are the typical applications for SI4963BDY-T1-E3?
- SI4963BDY-T1-E3 is commonly used in power management, load switching, and battery protection applications.
What is the operating temperature range for SI4963BDY-T1-E3?
- The operating temperature range for SI4963BDY-T1-E3 is typically -55°C to 150°C.
Does SI4963BDY-T1-E3 have built-in ESD protection?
- Yes, SI4963BDY-T1-E3 typically has built-in ESD protection.
What is the package type for SI4963BDY-T1-E3?
- SI4963BDY-T1-E3 is commonly available in a PowerPAK SO-8 package.
Is SI4963BDY-T1-E3 RoHS compliant?
- Yes, SI4963BDY-T1-E3 is typically RoHS compliant.
What is the gate threshold voltage for SI4963BDY-T1-E3?
- The gate threshold voltage for SI4963BDY-T1-E3 is typically around 2V.
Can SI4963BDY-T1-E3 be used in automotive applications?
- Yes, SI4963BDY-T1-E3 is suitable for use in automotive applications, as it meets the necessary standards and requirements.