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SI5476DU-T1-GE3

SI5476DU-T1-GE3

Product Overview

Category

The SI5476DU-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High power handling capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive requirements

Package

The SI5476DU-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high efficiency and reliability in power management systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 22A
  • On-Resistance (RDS(on)): 4.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 15nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI5476DU-T1-GE3 features the following pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D) 4. N/C 5. N/C 6. Drain (D) 7. Source (S) 8. N/C

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability in high-power applications
  • ESD protection for increased robustness

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Efficient power management
  • Compact package size
  • Enhanced thermal performance

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The SI5476DU-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SI5476DU-T1-GE3 is well-suited for various power management applications, including: - DC-DC converters - Motor control - Battery management systems - LED lighting - Power supplies

Detailed and Complete Alternative Models

Some alternative models to the SI5476DU-T1-GE3 include: - SI7469DP-T1-GE3 - SI7850DP-T1-GE3 - SI7216DN-T1-GE3 - SI7147DP-T1-GE3

In conclusion, the SI5476DU-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, providing efficient and reliable operation in various scenarios.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI5476DU-T1-GE3 en soluciones técnicas

  1. What is the maximum operating temperature of SI5476DU-T1-GE3?

    • The maximum operating temperature of SI5476DU-T1-GE3 is 150°C.
  2. What is the typical input voltage range for SI5476DU-T1-GE3?

    • The typical input voltage range for SI5476DU-T1-GE3 is 4.5V to 60V.
  3. What is the output current capability of SI5476DU-T1-GE3?

    • SI5476DU-T1-GE3 has an output current capability of up to 20A.
  4. Does SI5476DU-T1-GE3 have overcurrent protection?

    • Yes, SI5476DU-T1-GE3 features overcurrent protection to safeguard against excessive currents.
  5. What is the efficiency of SI5476DU-T1-GE3 at full load?

    • The efficiency of SI5476DU-T1-GE3 at full load is typically around 95%.
  6. Can SI5476DU-T1-GE3 be used in automotive applications?

    • Yes, SI5476DU-T1-GE3 is suitable for automotive applications due to its wide input voltage range and robust design.
  7. Does SI5476DU-T1-GE3 require external heat sinking for thermal management?

    • Depending on the application and ambient conditions, external heat sinking may be required for optimal thermal management of SI5476DU-T1-GE3.
  8. What is the switching frequency of SI5476DU-T1-GE3?

    • The switching frequency of SI5476DU-T1-GE3 is typically 300kHz.
  9. Is SI5476DU-T1-GE3 compatible with remote sensing for voltage regulation?

    • Yes, SI5476DU-T1-GE3 supports remote sensing for precise voltage regulation.
  10. Are there any recommended input/output capacitor values for SI5476DU-T1-GE3?

    • It is recommended to refer to the datasheet for specific input and output capacitor values based on the application requirements.