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SI7888DP-T1-GE3

SI7888DP-T1-GE3

Product Overview

SI7888DP-T1-GE3 belongs to the category of power MOSFETs. It is commonly used in power management applications due to its high efficiency and low on-resistance characteristics. The package type for SI7888DP-T1-GE3 is PowerPAK® SO-8, and it is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

  • Voltage Rating: 30V
  • Continuous Drain Current: 160A
  • RDS(ON): 1.5mΩ
  • Package Type: PowerPAK® SO-8
  • Packaging: Tape and Reel
  • Quantity: 3000 units per reel

Detailed Pin Configuration

The detailed pin configuration for SI7888DP-T1-GE3 is as follows: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

SI7888DP-T1-GE3 offers low on-resistance and high current-carrying capability, making it suitable for high-power applications. It also provides fast switching speeds, enabling efficient power management.

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Fast switching speeds

Disadvantages: - Sensitive to overvoltage conditions - Requires careful thermal management at high currents

Working Principles

SI7888DP-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating this voltage, the MOSFET can efficiently regulate power flow.

Detailed Application Field Plans

SI7888DP-T1-GE3 is commonly used in various power management applications, including: - DC-DC converters - Motor control systems - Battery protection circuits - Power supplies

Detailed and Complete Alternative Models

Some alternative models to SI7888DP-T1-GE3 include: - SI7898DP-T1-GE3 - SI7868DP-T1-GE3 - SI7858DP-T1-GE3

These alternatives offer similar performance characteristics and can be used as substitutes depending on specific application requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SI7888DP-T1-GE3 en soluciones técnicas

  1. What is the SI7888DP-T1-GE3?

    • The SI7888DP-T1-GE3 is a dual P-channel MOSFET designed for use in power management applications.
  2. What is the maximum drain-source voltage of the SI7888DP-T1-GE3?

    • The maximum drain-source voltage of the SI7888DP-T1-GE3 is 20V.
  3. What is the typical on-resistance of the SI7888DP-T1-GE3?

    • The typical on-resistance of the SI7888DP-T1-GE3 is 18mΩ at Vgs = -4.5V.
  4. What are the typical applications for the SI7888DP-T1-GE3?

    • The SI7888DP-T1-GE3 is commonly used in load switching, battery protection, and power distribution applications.
  5. What is the maximum continuous drain current of the SI7888DP-T1-GE3?

    • The maximum continuous drain current of the SI7888DP-T1-GE3 is 30A.
  6. What is the operating temperature range of the SI7888DP-T1-GE3?

    • The SI7888DP-T1-GE3 has an operating temperature range of -55°C to 150°C.
  7. What is the package type of the SI7888DP-T1-GE3?

    • The SI7888DP-T1-GE3 comes in a PowerPAK® SO-8 package.
  8. Does the SI7888DP-T1-GE3 have built-in ESD protection?

    • Yes, the SI7888DP-T1-GE3 features built-in ESD protection.
  9. What is the gate-source voltage (Vgs) threshold of the SI7888DP-T1-GE3?

    • The gate-source voltage threshold of the SI7888DP-T1-GE3 is typically -2.5V.
  10. Is the SI7888DP-T1-GE3 RoHS compliant?

    • Yes, the SI7888DP-T1-GE3 is RoHS compliant.