SIHB100N60E-GE3

Product Category

The SIHB100N60E-GE3 belongs to the category of power semiconductor devices.

Basic Information Overview

• Use: The SIHB100N60E-GE3 is used as a high-power, fast-switching insulated gate bipolar transistor (IGBT) for various power electronic applications.
• Characteristics: It features high current and voltage ratings, low on-state voltage drop, and fast switching speed.
• Package: The device is typically available in a TO-263-3 package.
• Essence: The essence of the SIHB100N60E-GE3 lies in its ability to efficiently control high power levels in electronic circuits.
• Packaging/Quantity: It is commonly packaged individually and sold in quantities suitable for industrial applications.

Specifications

• Voltage Rating: 600V
• Current Rating: 100A
• Switching Speed: <100ns
• On-State Voltage Drop: <1.8V
• Operating Temperature Range: -40°C to 150°C

Detailed Pin Configuration

The SIHB100N60E-GE3 typically has three main pins: collector, gate, and emitter. The pin configuration is as follows: - Collector (C): Pin 1 - Gate (G): Pin 2 - Emitter (E): Pin 3

Functional Features

• High current and voltage handling capabilities
• Fast switching speed
• Low on-state voltage drop
• Robust thermal performance

Advantages

• Efficient power control
• Suitable for high-power applications
• Fast response times

Disadvantages

• Higher cost compared to standard power transistors
• Requires careful thermal management due to high power dissipation

Working Principles

The SIHB100N60E-GE3 operates based on the principles of IGBT technology, where it combines the advantages of MOSFETs and bipolar junction transistors to achieve high power handling and fast switching characteristics.

Detailed Application Field Plans

The SIHB100N60E-GE3 is commonly used in the following application fields: - Motor drives - Renewable energy systems - Power supplies - Induction heating - Welding equipment

Detailed and Complete Alternative Models

Some alternative models to the SIHB100N60E-GE3 include: - IRGP4063DPBF - FGA25N120ANTD - IXGH32N60BD1

In conclusion, the SIHB100N60E-GE3 is a high-power IGBT with fast-switching capabilities, making it suitable for a wide range of power electronic applications.

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