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SIHD7N60E-GE3
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SIHD7N60E-GE3

Product Overview

Category

The SIHD7N60E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high voltage switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHD7N60E-GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 7A
  • On-Resistance (RDS(on)): 1.5Ω
  • Gate-Source Voltage (VGS): ±30V
  • Total Gate Charge (Qg): 15nC

Detailed Pin Configuration

The SIHD7N60E-GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high voltage applications
  • Low on-resistance leads to reduced power dissipation
  • Fast switching speed enhances overall system performance

Disadvantages

  • Higher gate capacitance may require careful driver design
  • Sensitivity to overvoltage conditions

Working Principles

The SIHD7N60E-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switched-mode power supplies - Motor control circuits - Inverters and converters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to the SIHD7N60E-GE3 include: - IRFP460: Similar voltage and current ratings - STW7NK80Z: Comparable characteristics and performance - FQP7P06: Lower voltage rating but suitable for certain applications

In conclusion, the SIHD7N60E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component in various power management and control applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de SIHD7N60E-GE3 en soluciones técnicas

  1. What is the maximum drain current of SIHD7N60E-GE3?

    • The maximum drain current of SIHD7N60E-GE3 is 7A.

  2. What is the voltage rating of SIHD7N60E-GE3?

    • SIHD7N60E-GE3 has a voltage rating of 600V.

  3. What type of package does SIHD7N60E-GE3 come in?

    • SIHD7N60E-GE3 comes in a DPAK (TO-252) package.

  4. What is the on-resistance of SIHD7N60E-GE3?

    • The on-resistance of SIHD7N60E-GE3 is typically 1.5 ohms.

  5. Can SIHD7N60E-GE3 be used for high-frequency applications?

    • Yes, SIHD7N60E-GE3 can be used for high-frequency applications due to its fast switching characteristics.

  6. Is SIHD7N60E-GE3 suitable for power factor correction circuits?

    • Yes, SIHD7N60E-GE3 is suitable for power factor correction circuits due to its high voltage and current ratings.

  7. What is the typical gate charge of SIHD7N60E-GE3?

    • The typical gate charge of SIHD7N60E-GE3 is 18nC.

  8. Does SIHD7N60E-GE3 have built-in protection features?

    • Yes, SIHD7N60E-GE3 has built-in protection against overcurrent and overtemperature conditions.

  9. Can SIHD7N60E-GE3 be used in automotive applications?

    • Yes, SIHD7N60E-GE3 is suitable for automotive applications due to its ruggedness and reliability.

  10. What are some common applications for SIHD7N60E-GE3?

    • Common applications for SIHD7N60E-GE3 include motor control, lighting, power supplies, and inverters.