SIZ730DT-T1-GE3

Product Category: Semiconductor Device

Basic Information Overview: - Category: Power MOSFET - Use: SIZ730DT-T1-GE3 is used as a power semiconductor device for various electronic applications. - Characteristics: It exhibits high efficiency, low on-resistance, and fast switching capabilities. - Package: The device is typically available in a compact and robust package suitable for surface mount applications. - Essence: SIZ730DT-T1-GE3 is essential for power management and control in electronic circuits. - Packaging/Quantity: It is commonly packaged in reels or trays with varying quantities depending on the manufacturer's specifications.

Specifications: - Voltage Rating: 100V - Current Rating: 30A - On-Resistance: 8mΩ - Package Type: D2PAK

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - High voltage capability - Low gate charge - Enhanced switching speed - Excellent thermal performance

Advantages and Disadvantages: - Advantages: - High efficiency - Fast switching - Low on-resistance - Robust packaging - Disadvantages: - Sensitivity to static electricity - Potential for thermal issues if not properly managed

Working Principles: SIZ730DT-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.

Detailed Application Field Plans: This power MOSFET is widely used in various applications such as: - Switching power supplies - Motor control - LED lighting - Battery management systems - Inverters

Detailed and Complete Alternative Models: - SIZ910DT-T1-GE4 - SIZ820DT-T1-GE2 - SIZ740DT-T1-GE1

This comprehensive entry provides an in-depth understanding of the SIZ730DT-T1-GE3 power MOSFET, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.