BT134-800E,127

Product Overview

• Category: Semiconductor
• Use: Switching and Amplification
• Characteristics: High voltage capability, low spread of dynamic parameters, high switching speed
• Package: TO-126
• Essence: NPN silicon epitaxial planar transistor
• Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications

• Voltage - Collector Emitter Breakdown (Max): 800V
• Current - Collector (Ic) (Max): 1A
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Frequency - Transition: 10MHz

Detailed Pin Configuration

• Pin 1: Emitter
• Pin 2: Base
• Pin 3: Collector

Functional Features

• Fast switching speed
• Low spread of dynamic parameters
• High voltage capability

Advantages

• Suitable for high voltage applications
• Low spread of dynamic parameters ensures consistent performance
• Fast switching speed allows for efficient operation

Disadvantages

• Limited current handling capacity compared to some alternative models
• Higher Vce saturation compared to certain alternatives

Working Principles

The BT134-800E,127 operates based on the principles of NPN silicon epitaxial planar transistors, utilizing its structure to control the flow of current between the collector and emitter terminals through the base terminal.

Detailed Application Field Plans

This transistor is commonly used in electronic circuits for switching and amplification purposes, particularly in high voltage applications such as power supplies, lighting systems, and motor control.

Detailed and Complete Alternative Models

• BT134-600D,118
• BT134-600E,127
• BT134-800D,118

Note: The above information provides a comprehensive overview of the BT134-800E,127 semiconductor, covering its category, use, characteristics, package details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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