Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
Fabricantes
P-channel, -30V, -25A, 9mΩ@-10V
Descripción
JSMSEMI (Jiesheng Micro)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
SHIKUES (Shike)
Fabricantes
PNP, Vceo=-30V, Ic=-800mA, hfe=150~300
Descripción
Convert Semiconductor
Fabricantes
CBI (Creation Foundation)
Fabricantes
SILAN (Silan Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APEC (Fuding)
Fabricantes
XDM (Xin Da Mao)
Fabricantes
WILLSEMI (Will)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 500mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@800mA, 80mA DC current gain (hFE@Ic,Vce): 400@100mA, 1V Characteristic frequency (fT): 100MHz
Descripción
Drain-source voltage (Vdss): 650V Continuous drain current (Id): 38A MOS tube
Descripción
N-channel, 600V, 12A, 600mΩ@10V
Descripción
Convert Semiconductor
Fabricantes